TITLE

SiO[sub 2] formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of

AUTHOR(S)
Sameshima, T.; Kohno, A.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p1018
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the reactive evaporation of silicon oxide (SiO) in oxygen atmosphere. Formation of silica (SiO[sub 2])/silicon (Si) interface by SiO evaporation; Differences of the interface trapping density between SiO[sub 2]/Si and polycrystalline silicon thin film transistors (poly-Si TFT); Fabrication of poly-Si TFT using SiO[sub 2] formation.
ACCESSION #
4266384

 

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