Nonresonant electron capture in GaAs/AlAs/AlGaAs double-barrier quantum well infrared detectors

Schneider, H.; Vinattieri, A.
February 1994
Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p1015
Academic Journal
Investigates the electron and hole capture times in double-barrier quantum well (QW) infrared detectors. Relaxation of photoexcited carriers from aluminum arsenide/aluminum gallium arsenide/aluminum arsenide barriers into gallium arsenide (GaAs) QW; Nonresonance of the electron capture process for GaAs; Occurrence of electron tunneling via T-minimum.


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