TITLE

GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy

AUTHOR(S)
Zhang, G.; Nappi, J.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p1009
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines gallium arsenide/gallium indium arsenide phosphide quantum well lasers by gas-source molecular beam epitaxy. Components of aluminum-free laser structure; Details of the threshold current density; Production of continuous-wave light output power in ridge waveguide lasers.
ACCESSION #
4266380

 

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