TITLE

Degradation of rapid thermal oxides due to the presence of nitrogen in the oxidation ambient

AUTHOR(S)
Hames, G.A.; Wortman, J.J.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p980
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Observes the effects of nitrogen on rapid thermal oxides. Formation of thermal oxides from oxygen; Incorporation of nitrogen in oxidation ambient; Absence of hot carrier resistance in the oxides with nitrogen.
ACCESSION #
4266370

 

Related Articles

  • Microscopic model for hot-electron trapping and detrapping in silicon dioxide. Porod, W.; Kamocsai, R. L. // Applied Physics Letters;11/26/1990, Vol. 57 Issue 22, p2318 

    We present a microscopic theory for high-field stressing and oxide degradation in SiO2. Hot electrons lead to a charge buildup in the oxide according to a dynamical trapping and detrapping model, where detrapping events are modeled as trap-to-band impact ionization processes. Electronic...

  • Interaction of high-power x rays with sapphire crystals and quartz based materials. Baryshnikov, V. I.; Kolesnikova, T. A.; Dorokhov, S. V. // Physics of the Solid State;Feb97, Vol. 39 Issue 2, p250 

    The interaction of high-power (10[sup 11] W/cm²) soft (1-3 keV) x-rays with inorganic oxides (A1[sub 2]O[sub 3] and SiO[sub 2]) is studied. It is found that when the wavelength of the x rays is comparable to the lattice constant of the crystal, besides generation of a high concentration of...

  • Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack. Yung-Yu Chen // Materials (1996-1944);Mar2014, Vol. 7 Issue 3, p2370 

    The channel fluorine implantation (CFI) process was integrated with the Si3N4 contact etch stop layer (SiN CESL) uniaxial-strained n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with the hafnium oxide/silicon oxynitride (HfO2/SiON) gate stack. The SiN CESL process clearly...

  • The charge pumping method: Experiment and complete simulation. Hofmann, F.; Hänsch, W. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3092 

    Deals with a study which calculated the charge pumping current of a metal-oxide-semiconductor transistor in the time domain utilizing a transient two-dimensional device simulation. Influence of hot-carrier stress on the charge pumping signal; Function of charge pumping; Suggestion to further...

  • Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect. Cheng, Kangguo; Lee, Jinju; Hess, Karl; Lyding, Joseph W. // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1882 

    A method based on the hydrogen/deuterium isotope effect is proposed to separate and quantify the effects of interface trap creation and oxide charge trapping on hot-carrier-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). Hydrogenated and deuterated...

  • Low Frequency Noise Degradation in 45 nm High-k nMOSFETs due to Hot Carrier and Constant Voltage Stress. Rahman, M. Shahriar; Çelik-Butler, Zeynep; Quevedo-Lopez, M. A.; Shanware, Ajit; Colombo, Luigi // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p263 

    Hafnium based materials are the leading candidates to replace conventional SiON as the gate dielectric in complementary metal-oxide-semiconductor devices. Hot carrier and constant voltage stress induced 1/f noise behavior is presented for HfSiON nMOSFETs. The additional low-frequency noise...

  • Local charge trapping and detection of trapped charge by scanning capacitance microscope in the... Hong, J.W.; Shin, S.M.; Kang, C.J.; Kuk, Y.; Khim, Z.G.; Sang-il Park // Applied Physics Letters;9/20/1999, Vol. 75 Issue 12, p1760 

    Studies charged trapping induced by hot carriers in a metal-oxide-semiconductor capacitor using a scanning capacitance microscope. Trapped charge generated by hot carriers injected from silicon substrate into silicon dioxide; Shifts in capacitance-voltage curves due to the locally trapped charge.

  • Effects of NH[sub 3] nitridation on oxides grown in pure N[sub 2]O ambient. Bhat, M.; Yoon, G.W. // Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2116 

    Examines the effects of NH[sub 3] nitridation on the chemical and electrical properties of N[sub 2]O oxides. Details on impurity diffusion barrier of oxynitrides; Preservation of interface immunity to hot-carrier injection and charge trapping; Structure of chemical bonding between NH[sub...

  • Hole trapping phenomena in the gate insulator of As-fabricated insulated gate field effect transistors. Lipkin, L.; Reisman, A.; Williams, C. K. // Journal of Applied Physics;11/1/1990, Vol. 68 Issue 9, p4620 

    Examines hole trapping in silicon dioxide using an optically assisted hot carrier injection technique on p-channel insulated gate field effect transistors. Overview of the capture cross section of the hole traps; Use of ionizing irradiation of oxides; Application of a combination of gate and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics