Degradation of rapid thermal oxides due to the presence of nitrogen in the oxidation ambient

Hames, G.A.; Wortman, J.J.
February 1994
Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p980
Academic Journal
Observes the effects of nitrogen on rapid thermal oxides. Formation of thermal oxides from oxygen; Incorporation of nitrogen in oxidation ambient; Absence of hot carrier resistance in the oxides with nitrogen.


Related Articles

  • Microscopic model for hot-electron trapping and detrapping in silicon dioxide. Porod, W.; Kamocsai, R. L. // Applied Physics Letters;11/26/1990, Vol. 57 Issue 22, p2318 

    We present a microscopic theory for high-field stressing and oxide degradation in SiO2. Hot electrons lead to a charge buildup in the oxide according to a dynamical trapping and detrapping model, where detrapping events are modeled as trap-to-band impact ionization processes. Electronic...

  • Interaction of high-power x rays with sapphire crystals and quartz based materials. Baryshnikov, V. I.; Kolesnikova, T. A.; Dorokhov, S. V. // Physics of the Solid State;Feb97, Vol. 39 Issue 2, p250 

    The interaction of high-power (10[sup 11] W/cm²) soft (1-3 keV) x-rays with inorganic oxides (A1[sub 2]O[sub 3] and SiO[sub 2]) is studied. It is found that when the wavelength of the x rays is comparable to the lattice constant of the crystal, besides generation of a high concentration of...

  • Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack. Yung-Yu Chen // Materials (1996-1944);Mar2014, Vol. 7 Issue 3, p2370 

    The channel fluorine implantation (CFI) process was integrated with the Si3N4 contact etch stop layer (SiN CESL) uniaxial-strained n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with the hafnium oxide/silicon oxynitride (HfO2/SiON) gate stack. The SiN CESL process clearly...

  • The charge pumping method: Experiment and complete simulation. Hofmann, F.; Hänsch, W. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3092 

    Deals with a study which calculated the charge pumping current of a metal-oxide-semiconductor transistor in the time domain utilizing a transient two-dimensional device simulation. Influence of hot-carrier stress on the charge pumping signal; Function of charge pumping; Suggestion to further...

  • Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect. Cheng, Kangguo; Lee, Jinju; Hess, Karl; Lyding, Joseph W. // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1882 

    A method based on the hydrogen/deuterium isotope effect is proposed to separate and quantify the effects of interface trap creation and oxide charge trapping on hot-carrier-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). Hydrogenated and deuterated...

  • Low Frequency Noise Degradation in 45 nm High-k nMOSFETs due to Hot Carrier and Constant Voltage Stress. Rahman, M. Shahriar; Çelik-Butler, Zeynep; Quevedo-Lopez, M. A.; Shanware, Ajit; Colombo, Luigi // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p263 

    Hafnium based materials are the leading candidates to replace conventional SiON as the gate dielectric in complementary metal-oxide-semiconductor devices. Hot carrier and constant voltage stress induced 1/f noise behavior is presented for HfSiON nMOSFETs. The additional low-frequency noise...

  • Local charge trapping and detection of trapped charge by scanning capacitance microscope in the... Hong, J.W.; Shin, S.M.; Kang, C.J.; Kuk, Y.; Khim, Z.G.; Sang-il Park // Applied Physics Letters;9/20/1999, Vol. 75 Issue 12, p1760 

    Studies charged trapping induced by hot carriers in a metal-oxide-semiconductor capacitor using a scanning capacitance microscope. Trapped charge generated by hot carriers injected from silicon substrate into silicon dioxide; Shifts in capacitance-voltage curves due to the locally trapped charge.

  • Effects of NH[sub 3] nitridation on oxides grown in pure N[sub 2]O ambient. Bhat, M.; Yoon, G.W. // Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2116 

    Examines the effects of NH[sub 3] nitridation on the chemical and electrical properties of N[sub 2]O oxides. Details on impurity diffusion barrier of oxynitrides; Preservation of interface immunity to hot-carrier injection and charge trapping; Structure of chemical bonding between NH[sub...

  • Hole trapping phenomena in the gate insulator of As-fabricated insulated gate field effect transistors. Lipkin, L.; Reisman, A.; Williams, C. K. // Journal of Applied Physics;11/1/1990, Vol. 68 Issue 9, p4620 

    Examines hole trapping in silicon dioxide using an optically assisted hot carrier injection technique on p-channel insulated gate field effect transistors. Overview of the capture cross section of the hole traps; Use of ionizing irradiation of oxides; Application of a combination of gate and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics