TITLE

Ambient gas effects on debris formed during KrF laser ablation of polyimide

AUTHOR(S)
Kuper, Stephan; Brannon, James
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1633
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effects of ambient gas on surface debris formed during krypton fluoride excimer laser ablation of polyimide. Application of blast wave theory for quantitative analysis of gas dynamics; Relation between debris radius and inverse third root of ambient gas pressure; Estimation of nascent blast pressure using blast energy value.
ACCESSION #
4266356

 

Related Articles

  • Interface kinetics during pulsed laser ablation. Xu, X.; Song, K. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 7, pS869 

    Abstract. This work investigates evaporation kinetics -- the relation between the surface temperature and pressure during excimer laser ablation. Nickel targets are ablated by excimer laser pulses in a laser fluence range between 1 and 6 J/cm[sup 2], with the upper limit exceeding the threshold...

  • Structure formation in excimer laser ablation of stretched poly(ethylene therephthalate) (PET): the influence of scanning ablation. Wagner, F.; Hoffmann, P. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 7, pS841 

    Abstract. Multiple pulse laser ablation of stretched PET is performed with an ArF excimer laser (193 nm) in order to produce micro channels. The surface structure remaining after "scanning ablation", in which the sample is moved during irradiation, is compared to the known results upon "static...

  • Time-resolved investigation of the transient surface reflection changes of subpicosecond excimer laser ablated liquids. Hopp, B.; Tóth, Z.; Gál, K.; Mechler, Á.; Bor, Zs.; Moustaizis, S.D.; Georgiou, S.; Fotakis, C. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 7, pS191 

    Abstract. A single shot measurement of subpicosecond time resolution was developed to investigate the transient surface reflection changes of excimer laser ablated liquids during one UV pulse. Polysilicone oil, methyl(metacrylate), styrene, and water were irradiated by a 500 fs KrF excimer...

  • Empirical photoablation rate model exemplified with the etching of polyphenylquinoxaline. Lazare, Sylvain; Granier, Vincent // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p862 

    A kinetic model of photoablation with the nanosecond pulses of an excimer laser, based on the so-called moving interface, is presented. The rate of the ablating interface is assumed to be v=k(I-It) when the intensity I exceeds the threshold intensity It. The intensity reaching the interface I...

  • Influence of the beam spot size on ablation rates in pulsed-laser processing. Eyett, M.; Bäuerle, D. // Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2054 

    Ablation rates in pulsed-laser processing depend heavily on the laser beam spot size. This has been observed for the first time for a number of different materials. Detailed investigations on this effect, performed by means of XeCl excimer-laser radiation and the example of LiNbO3, are reported...

  • Periodic morphological modification developed on the surface of polyethersulfone by XeCl excimer laser photoablation. Niino, Hiroyuki; Nakano, Masashi; Nagano, Shozaburo; Yabe, Akira; Miki, Tetsuro // Applied Physics Letters;7/31/1989, Vol. 55 Issue 5, p510 

    Periodic and stable micropatterns appeared on the surface of amorphous polyethersulfone etched with an excimer laser at 308 nm in ambient air and a vacuum. The control of such radiative conditions as fluence and incident angle enables us to modify the spacing and pattern of the microstructures....

  • Laser photoablation processes in organosilane thin films. Marinero, E. E.; Miller, R. D. // Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1041 

    We report on the excimer laser-induced photoablation of some organosilane polymers utilizing quartz microbalance techniques to monitor the nature of the ablation phenomenon. A fluence threshold for the ablation process is identified beyond which the material removal rate depends nonlinearly on...

  • XeCl excimer laser ablation of a polyethersulfone film: Dependence of periodic microstructures on a polarized beam. Niino, Hiroyuki; Shimoyama, Masashi; Yabe, Akira // Applied Physics Letters;11/26/1990, Vol. 57 Issue 22, p2368 

    Highly periodic stable microstructures appeared on the surface of polyethersulfone (PES) by XeCl excimer laser ablation with a single polarized beam in ambient air. Its formation mechanism was investigated using the time-resolved light scattering technique with the pulsed light of an XeF excimer...

  • Switching from photochemical to photothermal mechanism in laser ablation of benzene solutions. Hatanaka, Koji; Kawao, Mitsushi; Tsuboi, Yasuyuki; Fukumura, Hiroshi; Masuhara, Hiroshi // Journal of Applied Physics;12/1/1997, Vol. 82 Issue 11, p5799 

    Investigates the nanosecond KrF excimer laser ablation of benzyl chloride, benzyl alcohol, toluene, ethylbenzene and n-propylbenzene diluted in n-hexane, n-heptane, dichloromethane and 1,2-dichloroethane. Correlation of ablation threshold values for solutions to photochemical reactivity of the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics