Size quantization by faceting in (110)-oriented GaAs/AlAs heterostructures

Notzel, R.; Daweritz, L.
March 1992
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1615
Academic Journal
Investigates the size quantization by faceting in (100)-oriented gallium arsenide/aluminum arsenide heterostructures. Existence of step structure on substrate surface during molecular beam epitaxy; Use of reflection high-energy electron diffraction method; Effect of exciton lateral localization on exciton stabilization and exciton-phonon interaction.


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