TITLE

Time dependence of recombination-enhanced impurity diffusion in GaAs

AUTHOR(S)
Uematsu, Masashi; Wada, Kazumi
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1612
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the time dependence of recombination-enhanced impurity diffusion of beryllium in gallium arsenide. Simulation of peak current density reduction based on kinetic analysis of recombination center decay; Role of energy released on minority-carrier injection in recombination center annihilation; Effect of point defect emission on baralyme diffusion.
ACCESSION #
4266350

 

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