TITLE

Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor

AUTHOR(S)
Wang, Z.M.; As, D.J.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1609
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the impurity concentration distribution in undoped gallium arsenide (GaAs) layer by photoluminescence topography application. Growth of GaAs by metalorganic vapor phase epitaxy; Display of lateral variation of shallow donor and acceptor concentration; Reproduction of cellular structure of light encapsulated Czochralski GaAs substrate.
ACCESSION #
4266349

 

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