Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor

Wang, Z.M.; As, D.J.
March 1992
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1609
Academic Journal
Investigates the impurity concentration distribution in undoped gallium arsenide (GaAs) layer by photoluminescence topography application. Growth of GaAs by metalorganic vapor phase epitaxy; Display of lateral variation of shallow donor and acceptor concentration; Reproduction of cellular structure of light encapsulated Czochralski GaAs substrate.


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