Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs

Calderon, L.; Lu, Y.
March 1992
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1597
Academic Journal
Investigates the recombination mechanism in carbon-doped gallium arsenide by room-temperature photoluminescence (PL). Implication of the solution of one-dimensional continuity equation for minority carrier on PL intensity; Dependence of bulk nonradiative recombination rate on p[sub 3]; Proposed design for heterojuction bipolar transistor optimization.


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