TITLE

Highly doped p[sup +] regions by zinc diffusion utilizing metalorganic vapor-phase epitaxy

AUTHOR(S)
Paska, Zoltan F.; Haga, Dan
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1594
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes a method for the formation of doped p[sup +] region in gallium arsenide by zinc-diffusion in metalorganic vapor-phase epitaxy. Use of dimethylzinc as dopant source; Dependence of diffusion profile on zinc flow and diffusion time; Determination of typical zinc concentration and depth; Use of secondary ion mass spectrometry.
ACCESSION #
4266344

 

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