Highly doped p[sup +] regions by zinc diffusion utilizing metalorganic vapor-phase epitaxy

Paska, Zoltan F.; Haga, Dan
March 1992
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1594
Academic Journal
Describes a method for the formation of doped p[sup +] region in gallium arsenide by zinc-diffusion in metalorganic vapor-phase epitaxy. Use of dimethylzinc as dopant source; Dependence of diffusion profile on zinc flow and diffusion time; Determination of typical zinc concentration and depth; Use of secondary ion mass spectrometry.


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