TITLE

Novel annealing scheme for fabricating high-quality Ti-silicided shallow n[sup +]p junction by

AUTHOR(S)
Juang, M.H.; Cheng, H.C.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1579
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the fabrication of titanium (Ti)-silicided shallow n[sup +]p junction by phosphorus ion implantation in amorphous-silicon/Ti bilayer thin film. Application of rapid thermal annealing with post-conventional furnace annealing treatment; Facilitation of silicidation and damage annihilation; Crystallization of titanium silicide.
ACCESSION #
4266339

 

Related Articles

  • The alternative ion implantation approaches for ultra-shallow junction. Chu, Wei-Kan; Liu, Jiarui; Jin, Jianyue; Lu, Xinming; Shao, Lin; Li, Qingmian; Ling, Peiching // AIP Conference Proceedings;2001, Vol. 576 Issue 1, p891 

    Ion implantation has been a traditional and well-developed technique for junction formation in semiconductor devices for more than 30 years. However, now a big challenge to this technique is the high implant current and throughput at very low energy for ultra-shallow junction formation due to...

  • Study of low energy implants for ultrashallow junctions using thermal wave and optical techniques. Nicolaides, Lena; Salnick, Alex; Opsal, Jon // Review of Scientific Instruments;Jan2003, Vol. 74 Issue 1, p563 

    A combination of the thermal wave and optical technologies was found to be advantageous in characterization of implants for ultrashallow junctions. Two sets of Si wafers implanted with boron and arsenic ions at low energies (0.5-5.0 keV) and high dose (5 × 10[SUP14] cm[SUP-2]) were studied...

  • p on n ion-implanted junctions in liquid phase epitaxy HgCdTe layers on CdTe substrates. Bubulac, L. O.; Lo, D. S.; Tennant, W. E.; Edwall, D. D.; Chen, J. C.; Ratusnik, J.; Robinson, J. C.; Bostrup, G. // Applied Physics Letters;6/1/1987, Vol. 50 Issue 22, p1586 

    The first demonstrated achievement of p on n-type activated junctions in HgCdTe material by arsenic ion implantation is reported. The junctions were formed by treating the implant as a finite diffusion source in the post-implant anneals. The materials employed for this study were n-type indium...

  • Shallow p+ junction formation by a reverse-type dopant preamorphization scheme. Ganin, E.; Davari, B.; Harame, D.; Scilla, G.; Sai-Halasz, G. A. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2127 

    Device grade ultrashallow p+ junctions have been fabricated by a novel ion implantation scheme. The novelty of the method is in using antimony to amorphize silicon prior to a low-energy boron implantation. Antimony satisfies a combination of two requirements lacking from all previously applied...

  • Shallow boron junctions and preamorphization for deep submicron silicon technology. Walker, A. J.; Woerlee, P. H.; Pomp, H. G.; Cowern, N. E. B. // Journal of Applied Physics;4/15/1993, Vol. 73 Issue 8, p4048 

    Presents information on a study that investigated the structural and electrical properties of shallow junctions formed by implanting boron fluoride into crystal silicon or into silicon preamorphized by either silicon or germanium ions. Methodology of the study; Results and discussion on the study.

  • Electrical and structural properties of shallow p+ junctions formed by dual (Ga/B) ion implantation. Mei, P.; Jalali, B.; Yang, E. S.; Stoffel, N. G.; Hart, D. L. // Applied Physics Letters;4/2/1990, Vol. 56 Issue 14, p1362 

    Ultrashallow p+ junctions formed by dual implanation of Ga and B with low-temperature rapid thermal anneal (RTA) are reported. The electrical and structural properties of the shallow junction were studied by sheet resistance and diode reverse recovery measurements, Rutherford backscattering...

  • Hole-trapping-related transients in shallow n[sup +]-p junctions fabricated in a high-energy boron-implanted p well. Poyai, A.; Simoen, E.; Claeys, C. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p949 

    This letter describes a transient phenomenon in the reverse hole current of large-area shallow n[sup +]-p-well junctions, giving rise to a hump at a specific reverse bias. This corresponds to a certain depletion depth in the retrograde p well, which has been fabricated by a deep (200 keV) and a...

  • Plasma immersion ion implantation of SiF[sub 4] and BF[sub 3] for sub-100 nm P+/N junction.... Qian, X.Y.; Cheung, N.W.; Lieberman, M.A.; Felch, S.B.; Brennan, R.; Current, M.I. // Applied Physics Letters;7/15/1991, Vol. 59 Issue 3, p348 

    Fabricates sub-100 nanometer P+/N junctions using plasma immersion ion implantation (PIII). Immersion of silicon wafer in SiF[sub 4]/BF[sub 3] plasma; Acceleration of positively charged ions in the plasma sheath; Observation of PIII dose rate.

  • Carrier Illumination as a tool to probe implant dose and electrical activation. Vandervorst, W.; Clarysse, T.; Brijs, B.; Loo, R.; Peytier, Y.; Pawlak, B.J.; Budiarto, E.; Borden, P. // AIP Conference Proceedings;2003, Vol. 683 Issue 1, p758 

    The Carrier Illuminationâ„¢ (CI) method is an optical technique for non-destructive in-line monitoring of post-anneal junction depth, pre-anneal pre-amorphisation implant (PAI) depth, and dose. This work describes the sensitivity of the CI-signal to the as-implant dose and demonstrates that...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics