Novel annealing scheme for fabricating high-quality Ti-silicided shallow n[sup +]p junction by

Juang, M.H.; Cheng, H.C.
March 1992
Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1579
Academic Journal
Describes the fabrication of titanium (Ti)-silicided shallow n[sup +]p junction by phosphorus ion implantation in amorphous-silicon/Ti bilayer thin film. Application of rapid thermal annealing with post-conventional furnace annealing treatment; Facilitation of silicidation and damage annihilation; Crystallization of titanium silicide.


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