Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in MnSi/MgO/Co2CoFe magnetic tunnel junctions

Tsunegi, S.; Sakuraba, Y.; Oogane, M.; Naganuma, Hiroshi; Takanashi, K.; Ando, Y.
June 2009
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p252503
Academic Journal
Tunnel magnetoresistance (TMR) effect was investigated in Co2MnSi/CoFeB(0–2 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we infer that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5-nm-thick CoFeB layer. Furthermore, by insertion of the thin CoFeB layer, the temperature dependence of the TMR ratio was improved because of the suppression of the fluctuation of the magnetic moment at the Co2MnSi/MgO interface.


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