TITLE

Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

AUTHOR(S)
Gao, L. G.; Xu, B.; Guo, H. X.; Xia, Y. D.; Yin, J.; Liu, Z. G.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p252901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The band alignments of (La2O3)0.5(SiO2)0.5(LSO)/GaN and LSO/SiO2/GaN gate dielectric stacks were investigated comparatively by using x-ray photoelectron spectroscopy. The valence band offsets for LSO/GaN stack and LSO/SiO2/GaN stack are 0.88 and 1.69 eV, respectively, while the corresponding conduction band offsets are found to be 1.40 and 1.83 eV, respectively. Measurements of the leakage current density as function of temperature revealed that the LSO/SiO2/GaN stack has much lower leakage current density than that of the LSO/GaN stack, especially at high temperature. It is concluded that the presence of a SiO2 buffer layer increases band offsets and reduces the leakage current density effectively.
ACCESSION #
42642427

 

Related Articles

  • Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies. Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A. // Applied Physics Letters;3/11/2013, Vol. 102 Issue 10, p102106 

    We report a consistent conduction band offset (CBO) at a GeO2/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and...

  • Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors. Galatage, R. V.; Dong, H.; Zhernokletov, D. M.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M. // Applied Physics Letters;4/1/2013, Vol. 102 Issue 13, p132903 

    The interface trap density (Dit) and bonding at the Al2O3/InP interface was investigated using capacitance-voltage (C-V) measurements and X-ray photoelectron spectroscopy (XPS). The Dit extracted using C-V measurements show a peak near midgap and a tail, which extends into the InP conduction...

  • Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization. Swaminathan, Shankar; Oshima, Yasuhiro; Kelly, Michael A.; McIntyre, Paul C. // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p032907 

    We investigate the effects of H2O oxidant pulsing of Ge (100) substrates prior to Al2O3 atomic layer deposition (ALD) to synthesize metal-oxide-semiconductor devices. The prepulsing reduces the hysteresis in capacitance-voltage measurements from 490 to 30 mV at the flatband voltage and appears...

  • Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures. Daeyoung Lim; Haight, Richard; Copel, Matthew; Cartier, Eduard // Applied Physics Letters;8/15/2005, Vol. 87 Issue 7, p072902 

    We describe an in situ method for measuring the band bending of Si substrates in complex metal-oxide-semiconductor systems using femtosecond pump-probe photoelectron spectroscopy. Following deposition of metal layers (Pt, Re, or Re oxide) on the high-k dielectric HfO2, measurement of the band...

  • Reexamination of band offset transitivity employing oxide heterojunctions. Wang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Zhang, Jing; Han, Kai; Yang, Hong; Ma, Xueli; Zhao, Chao; Chen, Dapeng; Ye, Tianchun // Applied Physics Letters;1/21/2013, Vol. 102 Issue 3, p031605 

    Band offset transitivity is reexamined extendedly by employing oxide heterojuctions. The valence band offsets (ΔEV) at HfO2/SiO2, Al2O3/SiO2, and HfO2/Al2O3 heterojunctions are experimentally determined to be 0.81, 0.25, and 0.25 eV, respectively, by X-ray photoelectron spectroscopy. Thus,...

  • Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100). Lei, Ming; Yum, J. H.; Price, J.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Lysaght, P. S.; Bersuker, G.; Downer, M. C. // Applied Physics Letters;3/19/2012, Vol. 100 Issue 12, p122906 

    We report optical characterization of the conduction band offset (CBO) between atomic-layer-deposited single crystal BeO and Si using internal photoemission (IPE) and internal multi-photon photoemission (IMPE), and of the valence band offset (VBO) using synchrotron x-ray photoelectron...

  • Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density. Trinh, Hai-Dang; Lin, Yueh-Chin; Nguyen, Minh-Thuy; Nguyen, Hong-Quan; Duong, Quoc-Van; Luc, Quang-Ho; Wang, Shin-Yuan; Nguyen, Manh-Nghia; Yi Chang, Edward // Applied Physics Letters;9/30/2013, Vol. 103 Issue 14, p142903 

    In this work, the band alignment, interface, and electrical characteristics of HfO2/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have...

  • X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor.... Wang, M.W.; Swenberg, J.F. // Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3455 

    Uses x-ray photoelectron spectroscopy to measure the valence-band offsets for manganese (Mg)-based heterojunctions. Values obtained for the valence-band offsets of the respective heterojunction; Deviation of the values from the common anion rule; Application of the results to the design of...

  • Valence-band discontinuities of wurtzite GaN, AIN, and InN heterojunctions measured by x-ray.... Martin, G.; Botchkarev, A. // Applied Physics Letters;4/29/1996, Vol. 68 Issue 18, p2541 

    Examines the valence-band discontinuities of wurtzite gallium nitride (GaN), aluminum nitride (AlN), and indium nitride (InN) heterojunctions using x-ray photoemission spectroscopy. Asymmetry in the GaN, AlN, and InN heterojunctions; Mechanism of piezoelectric strain effect; Tables of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics