High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer

Jorel, C.; Vallée, C.; Gonon, P.; Gourvest, E.; Dubarry, C.; Defay, E.
June 2009
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p253502
Academic Journal
Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance (α). A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high-k materials with opposite α, it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3/ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of -60 ppm/V2 associated with a density of 11.5 fF/μm2. These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors.


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