TITLE

Surface-polarization-induced formation of amorphous foliaceous SiO2 helical nanobelts

AUTHOR(S)
Liu, L. Z.; Wu, X. L.; Zhang, Z. Y.; Li, T. H.; Chu, Paul K.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p253110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous foliaceous SiO2 helical nanobelts with equidistant alternating bright and dark stripes are synthesized using thermal evaporation. A very thin polar crystalline layer spontaneously formed on the nanobelt surface stabilizes the twist and the internal shear stress imbalance induces the periodic reconstruction. The periodic bright and dark stripes disappear slowly with growth time because the polar crystalline SiO2 layers are covered slowly by an amorphous layer. The polar surface-driven mechanism, which can adequately explain the appearance and disappearance of the periodic fringes, is verified theoretically.
ACCESSION #
42642393

 

Related Articles

  • Electromechanical instability in semicrystalline polymers. Xuanhe Zhao; Zhigang Suo // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p031904 

    When a layer of a semicrystalline polymer is subject to a tensile force in its plane and a voltage through its thickness, the deformation of the layer is initially homogeneous, but it then localizes. The electromechanical instability sets in when the force and the voltage reach critical...

  • Mechanisms of ion beam mixing in metals and semiconductors. Nordlund, K.; Ghaly, M.; Averback, R. S. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1238 

    Presents a study which investigated ion beam mixing in crystalline and amorphous semiconductors and metals. Information on the molecular dynamics simulations used to conduct the investigation; Comparison of the magnitude of mixing in an amorphous element to its crystalline counterpart;...

  • Optoelectrical properties of amorphous-crystalline silicon heterojunctions. Mimura, Hidenori; Hatanaka, Yoshinori // Applied Physics Letters;1984, Vol. 45 Issue 4, p452 

    Optoelectrical properties of a heterojunction consisting of p-type hydrogenated amorphous silicon (a-Si:H) on n-type crystalline silicon (c-Si) have been investigated by measuring current-voltage and capacitance-voltage characteristics and the temperature dependence of the dark current. It was...

  • In-plane light polarization in nonpolar m-plane CdxZn1-xO/ZnO quantum wells. Matsui, Hiroaki; Tabata, Hitoshi // Applied Physics Letters;6/27/2011, Vol. 98 Issue 26, p261902 

    We studied polarized photoluminescence (PL) as a function of both temperature and excitation power from m-plane CdxZn1-xO/ZnO single quantum wells having different Cd contents. The polarized PL properties at 300 K were enhanced as the Cd content increased. This enhancement is due to the...

  • Preparation, Spectroscopy, Physicochemical Properties and X-ray Structure Analysis of 3,4,5-Trimethoxy N-(2-hydroxybenzylidene) aniline. Guillaume, Kodjo Charles; Herve, Zabri; Anoubile, Benie; Jacques, Estienne // E-Journal of Chemistry;2009, Vol. 6 Issue 4, p1103 

    3,4,5-Trimethoxy N-(salicylidene) aniline was synthesized and characterized by IR spectroscopy, ¹H NMR and x-ray single crystal analysis. UV-visible spectroscopy was used for physicochemical tests. X-ray data reveals that the crystalline network cohesion of this compound is essentially...

  • Excellent uniaxial alignment of poly(9,9-dioctylfluorenyl-2,7-diyl) induced by photoaligned polyimide films. Sakamoto, Kenji; Usami, Kiyoaki; Uehara, Yoichi; Ushioda, Sukekatsu // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p211910 

    We have investigated the alignment of poly (9,9-dioctylfluorenyl-2,7-diyl) (PFO) induced by photoaligned polyimide films. To induce anisotropic orientation of polyimide backbone structures by optical treatment, we used a specially designed polyimide (Azo-PI), which contains azobenzene in the...

  • Dependency of threshold switching on density of localized states of Ge2Sb2Te5 thin films for phase change random access memory. Seung Wook Ryu; Jong Ho Lee; Yong Bae Ahn; Choon Hwan Kim; Byung Joon Choi; Cheol Seong Hwang; Hyeong Joon Kim // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172114 

    The threshold switching of Ge2Sb2Te5 (GST) films for phase change random access memory applications was investigated by measuring the variation in the threshold voltage (VT) with the crystallinity of the GST films and photon energy absorption spectra. As the GST film was amorphized, VT increased...

  • Direct observation of the electronic states of single crystalline rubrene under ambient condition by photoelectron yield spectroscopy. Nakayama, Yasuo; Machida, Shinichi; Minari, Takeo; Tsukagishi, Kazuhito; Noguchi, Yutaka; Ishii, Hisao // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p173305 

    The electronic states of single crystalline (SC) rubrene were experimentally observed by photoelectron yield spectroscopy without the sample charging problem. The ionization energy (Is) in the SC phase was determined to be 4.85(±0.05) eV, which is reduced by 0.45 eV compared to that of the...

  • Thermal characterization of dielectric and phase change materials for the optical recording applications. Yang, Y.; Li, C.-T.; Sadeghipour, S. M.; Dieker, H.; Wuttig, M.; Asheghi, M. // Journal of Applied Physics;7/15/2006, Vol. 100 Issue 2, p024102 

    Advances in the phase change optical recording technology strongly depend on the optical and thermal optimizations of the metal/ZnS–SiO2/phase change multilayer structure, which requires accurate modeling and thermal characterization of the phase change media structure. In the present...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics