TITLE

On the temperature dependence of point-defect-mediated luminescence in silicon

AUTHOR(S)
Recht, Daniel; Capasso, Federico; Aziz, Michael J.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p251113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.
ACCESSION #
42642389

 

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