On the temperature dependence of point-defect-mediated luminescence in silicon

Recht, Daniel; Capasso, Federico; Aziz, Michael J.
June 2009
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p251113
Academic Journal
We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.


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