Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

Corrêa, S. A.; Radtke, C.; Soares, G. V.; Miotti, L.; Baumvol, I. J. R.; Dimitrijev, S.; Han, J.; Hold, L.; Kong, F.; Stedile, F. C.
June 2009
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p251909
Academic Journal
C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region.


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