Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating

Bakan, G.; Cywar, A.; Silva, H.; Gokirmak, A.
June 2009
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p251910
Academic Journal
Nanocrystalline silicon microwires are self-heated through single, large amplitude, and microsecond voltage pulses. Scanning electron micrographs show very smooth wire surfaces after the voltage pulse compared to as-fabricated nanocrystalline texture. Voltage-pulse induced self-heating leads to significant conductance improvement, suggesting crystallization of the wires. The minimum resistivity during the pulse is extracted from wires of different dimensions as 75.0±4.6 μΩ cm, matching previously reported values for liquid silicon. Hence, nanocrystalline silicon microwires melt through self-heating during the voltage pulse and resolidify upon termination of the pulse, resulting in very smooth and less-resistive crystalline structures.


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