Stripe domain structure in epitaxial (001) BiFeO3 thin films on orthorhombic TbScO3 substrate

Folkman, C. M.; Baek, S. H.; Jang, H. W.; Eom, C. B.; Nelson, C. T.; Pan, X. Q.; Li, Y. L.; Chen, L. Q.; Kumar, A.; Gopalan, V.; Streiffer, S. K.
June 2009
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p251911
Academic Journal
We have analyzed the ferroelastic and ferroelectric domain structure of high crystalline quality (001) BiFeO3 films on orthorhombic (110) TbScO3 substrates. Two domains were present in stripes separated by (010) vertical boundaries, with spontaneous polarizations in adjacent domains rotated by 109°. The striped morphology was caused by nucleation of only two ferroelastic domains on the low symmetry GdFeO3-type substrate. Domain engineering through substrate symmetry is an important finding for rhombohedral ferroelectric epitaxial thin films. The stripe pattern with vertical walls may be useful for extracting domain wall contributions to magnetism and electrical transport properties of BiFeO3 materials.


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