Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density

Shih-Chun Ling; Chu-Li Chao; Jun-Rong Chen; Po-Chun Liu; Tsung-Shine Ko; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang; Shun-Jen Cheng; Jenq-Dar Tsay
June 2009
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p251912
Academic Journal
The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on a nanorod GaN template. The investigation of x-ray diffraction showed that the strain in a-plane GaN grown on r-plane sapphire could be mitigated. The average threading dislocation density estimated by transmission electron microscopy was reduced from 3×1010 to 3.5×108 cm-2. From the temperature-dependent photoluminescence, the quantum efficiency of the a-plane GaN was enhanced by the nanorod epitaxial lateral overgrowth (NRELOG). These results demonstrated the opportunity of achieving a-plane GaN films with low dislocation density and high crystal quality via NRELOG.


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