Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

Bennett, N. S.; Cowern, N. E. B.; Sealy, B. J.
June 2009
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p252109
Academic Journal
Strain engineering plays a pivotal role in modern devices due to the advantages it offers in enhancing carrier mobility, μ. In addition to strain, [variant_greek_epsilon], carrier concentration, N, also determines mobility and an understanding of the functional dependence μ(N,[variant_greek_epsilon]) at various levels of strain is vital. Although well established for low and moderate doping, currently little is known about μ(N) for high carrier concentrations (>1019 cm-3) in strained Si. We present experimental data to fill this void, allowing an extension of the current model for μ(N) [Masetti et al., IEEE Trans. Electron Devices 30, 764 (1983)] to account for strain. We also consider the influence of strain induced from dopant atoms. Experiments show the effects of tensile strain as a mobility enhancer are reduced but still significant at high doping concentrations. The model reproduces this effect and accounts for μ(N,[variant_greek_epsilon]) across the full range of doping concentrations.


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