Structural and electrical properties of thin SrHfON films for high-k gate dielectric

Li-ping Feng; Zheng-tang Liu
June 2009
Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p252907
Academic Journal
Thin SrHfON films were prepared by reactive cosputtering of Hf–O and Sr–O targets in Ar/N2 ambient environment. Structural and electrical properties of the as-deposited and annealed SrHfON films used as gate dielectrics have been investigated. The SrHfON films have crystallization temperature higher than 900 °C. After annealing at 900 °C, high dielectric constant of 19.3 and effective work function of 4.13 eV was obtained for the SrHfON films. It is worth mentioning that the leakage current density of Au/SrHfON/IL SiOx gate stack is two orders of magnitude lower than that of polycrystalline silicon/HfO2 structure.


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