TITLE

In situ monitoring of strain relaxation during antimony-mediated growth of Ge and Ge[sub 1-y]

AUTHOR(S)
Osten, H.J.; Klatt, J.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p630
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the growth of germanium and Ge[sub 0.99]C[sub 0.01] layers on silicon. Use of reflection high energy electron diffraction; Measurement of the distance between diffraction features during growth; Onset of plastic relaxation in the layers as a function of growth temperature.
ACCESSION #
4258442

 

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