In situ monitoring of strain relaxation during antimony-mediated growth of Ge and Ge[sub 1-y]

Osten, H.J.; Klatt, J.
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p630
Academic Journal
Investigates the growth of germanium and Ge[sub 0.99]C[sub 0.01] layers on silicon. Use of reflection high energy electron diffraction; Measurement of the distance between diffraction features during growth; Onset of plastic relaxation in the layers as a function of growth temperature.


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