Silicon field-effect transistor based on quantum tunneling

Tucker, J.R.; Chinlee Wang
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p618
Academic Journal
Examines the regulation of current flow within a silicon field-effect transistor by gate-induced tunneling. Details of the sketch of tunneling metal-oxide-semiconductor field-effect transistors structure with Schottky barrier contacts; Induction of internal field emission through the Schottky barrier; Calculation of the output characteristics.


Related Articles

  • Cascode MOSFET increases boost regulator's input- and output-voltage ranges. Lester, Scot; Thompson, Brad; Granville, Fran // EDN;9/1/2005, Vol. 50 Issue 18, p86 

    This paper addresses the limitations of integrated circuit boost regulators. One can extend a boost regulator's output-voltage range by adding an external transistor that has been a higher breakdown voltage than the regulator. However, the internal design of a typical boost regulator's control...

  • Low-Dropout Current Regulator Improves LED Driver Efficiency. Goodrich, Patrick D. // Electronic Design;11/06/2000, Vol. 48 Issue 23, p142 

    Reports on the design of improved light-emitting diodes (LED) to provide efficient power management in maximizing battery life of battery-powered electronics design. Incorporation of a low-voltage Metal Oxide semiconductor field-effect transistors device to reduce R2's bias current by the...

  • Buck bias regulator with 75V input.  // Electronics Weekly;9/17/2003, Issue 2115, p27 

    National Semiconductor Corp. is offering its smallest high-voltage buck bias switching regulator to satisfy housekeeping or bias power needs in next-generation communications, automotive, -48 V distributed and battery-powered systems. The LM5007 is a buck bias regulator which steps down a...

  • Field-effect modulation of contact resistance between carbon nanotubes. Kodama, Yoshihiro; Sato, Ryota; Inami, Nobuhito; Shikoh, Eiji; Yamamoto, Yoshiyuki; Hori, Hidenobu; Kataura, Hiromichi; Fujiwara, Akihiko // Applied Physics Letters;9/24/2007, Vol. 91 Issue 13, p133515 

    Local transport properties of a carbon nanotube (CNT) thin-film transistor (TFT) have been investigated by conducting atomic force microscopy. The current in a CNT bundle is almost constant, whereas it drastically decreases at the contacts between CNTs. Current drops at the contacts are reduced...

  • Heterostructure unipolar spin transistors. Flatté, M. E.; Vignale, G. // Journal of Applied Physics;5/15/2005, Vol. 97 Issue 10, p104508-1 

    We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The current of base majority spin electrons to the collector...

  • Switching regulator efficiently controls white-LED current. Grantham, Clayton B. // EDN;4/27/2006, Vol. 51 Issue 9, p98 

    The article focuses on the use of the LM2852 switched-mode bucking regulator in controlling the current flow through a white light-emitting diode (LED). One method of biasing an LED involves connecting a resistor in series with the LED to limit its maximum current. Using a series resistor allows...

  • MOSFET shunt regulator substitutes for series regulator. Michaels, Stuart R. // EDN Europe;Jan2005, Vol. 50 Issue 1, p41 

    Describes the use of metal oxide semiconductor field-effect transistor shunt regulator as substitutes for series regulator. Threshold voltage; Gate-to-source voltage; Electric current; Output impedance; Cause of a large negative-temperature coefficient of the gate-to-source voltage.

  • Software hold the key to switching-regulator design. Prophet, Graham // EDN;9/13/2001, Vol. 46 Issue 20, p43 

    Reports the offering of free software packages on power-management designs. Program introduction from Texas Instruments series of DC/DC converter with integrated power MOSFET; Designing DC/DC converter using Buck-It package downloaded at Micrel's Web; Design of STMicroelectronics' Viper range...

  • Add Fail-Safe Shoot-Through Protection To Power MOSFET. Dongjie Cheng; Degang Xia; Hahn, Dennis // Electronic Design;3/13/2008, Vol. 56 Issue 5, p82 

    The article focuses on the use of fail-safe shoot-through protection in powering the metal-oxide-semiconductor field-effect transistor (MOSFET). MOSFET is a power switching elements in motor controllers and regulators. Its power controller circuit covers protective features for shoot-through...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics