TITLE

Silicon field-effect transistor based on quantum tunneling

AUTHOR(S)
Tucker, J.R.; Chinlee Wang
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p618
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the regulation of current flow within a silicon field-effect transistor by gate-induced tunneling. Details of the sketch of tunneling metal-oxide-semiconductor field-effect transistors structure with Schottky barrier contacts; Induction of internal field emission through the Schottky barrier; Calculation of the output characteristics.
ACCESSION #
4258438

 

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