TITLE

Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

AUTHOR(S)
Martin, G.; Strite, S.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p610
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the valence-band discontinuity at wurtzite gallium nitride/aluminium nitride (GaN/AlN) heterojunction by x-ray photoemission spectroscopy. Measurement of the core level binding energies in relation to the valence-band minimum in both GaN and AlN bulk films; Location of the valence-band maximum; Non-occurrence of band bending at the sample surface.
ACCESSION #
4258435

 

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