Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

Martin, G.; Strite, S.
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p610
Academic Journal
Examines the valence-band discontinuity at wurtzite gallium nitride/aluminium nitride (GaN/AlN) heterojunction by x-ray photoemission spectroscopy. Measurement of the core level binding energies in relation to the valence-band minimum in both GaN and AlN bulk films; Location of the valence-band maximum; Non-occurrence of band bending at the sample surface.


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