Selenium-treated GaAs(001)-2x3 surface studied by scanning tunneling microscopy

Shigekawa, Hidemi; Oigawa, Haruhiro
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p607
Academic Journal
Examines the stabilization of selenium-passivated gallium (Ga) arsenide (001) surface by 2x3 reconstruction. Observation of the ordered elliptical protrusions by scanning tunneling microscopy; Proposition of a double-layered dimer model; Rationale for the formation of a Ga[sub 2]Se[sub 3]-like structure with ordered 1/3-ML Ga vacancies.


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