TITLE

Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen

AUTHOR(S)
Huang, J.W.; Kuech, T.F.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p604
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the development of multiple deep levels in metalorganic vapor phase epitaxy gallium arsenide (GaAs) grown by controlled oxygen incorporation. Use of (C[sub 2]H[sub 5])AlOC[sub 2]H[sub 5] as an oxygen source; Use of deep level transient spectroscopy; Application of the deep levels to form highly resistive GaAs.
ACCESSION #
4258433

 

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