Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen

Huang, J.W.; Kuech, T.F.
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p604
Academic Journal
Examines the development of multiple deep levels in metalorganic vapor phase epitaxy gallium arsenide (GaAs) grown by controlled oxygen incorporation. Use of (C[sub 2]H[sub 5])AlOC[sub 2]H[sub 5] as an oxygen source; Use of deep level transient spectroscopy; Application of the deep levels to form highly resistive GaAs.


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