Nucleation of GaAs on CaF[sub 2]/Si(111) substrates

Weidan Li; Anan, Takayoshi
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p595
Academic Journal
Identifies the types of nucleation modes in the epitaxial growth of gallium arsenide (GaAs) on CaF[sub 2]/Si(111) substrates. Role of temperature in the identification of nucleation modes; Production of two-dimensional nucleation of GaAs at high temperature; Use of Rutherford backscattering spectrometry in investigating the nucleation.


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