Growth and characterization of GaInP unicompositional disorder-order-disorder quantum wells

Schneider Jr., R.P.; Jones, E.D.
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p587
Academic Journal
Examines the growth and characterization of gallium indium phosphide unicompositional quantum well heterostructures. Use of metalorganic vapor phase epitaxy to grow unicompositional quantum wells; Occurrence of interfaces between highly ordered quantum wells and disordered barriers; Effect of temperature on emission peaks.


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