Deep levels in 6H-SiC wafers and step-controlled epitaxial layers

Seongjoo Jang; Kimoto, Tsunenobu
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p581
Academic Journal
Investigates deep levels in 6H-SiC wafer grown by a modified Lely method and step-controlled epitaxial layers by transient capacitance methods. Observation of deep electron traps; Identification of the deep level origins; Concentration of electrons traps observed in the epilayers.


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