TITLE

Electrical deactivation of arsenic as a source of point defects

AUTHOR(S)
Rousseau, P.M.; Griffin, P.B.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p578
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Considers the role of electrical deactivation of arsenic in enhancing silicon point defects. Preparation of fully electrically active arsenic layers; Role of arsenic deactivation in enhancing boron diffusion; Discussion on the diffusion enhancement of boron and of deactivated dose of arsenic.
ACCESSION #
4258424

 

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