Electrical deactivation of arsenic as a source of point defects

Rousseau, P.M.; Griffin, P.B.
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p578
Academic Journal
Considers the role of electrical deactivation of arsenic in enhancing silicon point defects. Preparation of fully electrically active arsenic layers; Role of arsenic deactivation in enhancing boron diffusion; Discussion on the diffusion enhancement of boron and of deactivated dose of arsenic.


Related Articles

  • Modeling of dopant diffusion in silicon: An effective diffusivity approach including point-defect couplings. Mathiot, Daniel; Martin, Serge // Journal of Applied Physics;9/15/1991, Vol. 70 Issue 6, p3071 

    Presents a simplified model for dopant diffusion in silicon in the presence of nonequilibrium point defects. Calculation of the point-defect concentrations; Main basic assumptions of the dopant diffusion model; Reason for the nonlinearities in the diffusion behavior of arsenic and antimony.

  • Separation of surface accumulation and bulk neutral channel in junctionless transistors. Dae-Young Jeon; So Jeong Park; Mouis, Mireille; Min-Kyu Joo; Barraud, Sylvain; Gyu-Tae Kim; Ghibaudo, Gérard // Applied Physics Letters;6/30/2014, Vol. 104 Issue 26, p1 

    The error rate of low-field mobility (μ0) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (Nd) for a typical value of the first order mobility attenuation factor θ0≈0.1V-1....

  • Structure, Electronic Properties and Annealing Behavior of Diinterstitial-Oxygen Center in Silicon. Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Gusakov, V. E.; Lastovskii, S. B.; Murin, L. I.; Ganagona, N.; Monakhov, E. V.; Svensson, B. G. // Solid State Phenomena;2016, Vol. 242, p290 

    It is argued in this work that a DLTS signal associated with hole emission from a radiation-induced defect with an energy level at Ev + 0.09 eV is related to a complex of silicon diinterstitial with an oxygen atom (I2O). This signal has been observed in the DLTS spectra of p-type Si:O samples...

  • Point defect kinetics and dopant diffusion during silicon oxidation. Mathiot, D.; Pfister, J. C. // Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p627 

    Using a full calculation including all the couplings between the dopants and the point defects, we show that the transient effect observed at short times for the influence of oxidation on dopant diffusion in Si cannot be explained by the existence of an energy barrier to the recombination of...

  • Transient reflecting grating spectroscopy for defect analysis of surface region of semiconductors. Donen, Hiroshi; Katayama, Kenji; Sawada, Tsuguo // Journal of Applied Physics;8/1/2002, Vol. 92 Issue 3, p1367 

    Ultrafast transient reflecting grating (TRG) spectroscopy was applied to investigate the influence of various defect states on ultrafast carrier dynamics of up to 3 ps duration in an ion-implanted silicon surface region. The TRG spectra revealed the energy-state distribution of two kinds of...

  • Diffusion of phosphorus in arsenic and boron doped silicon. Wittel, Fred; Dunham, Scott // Applied Physics Letters;3/13/1995, Vol. 66 Issue 11, p1415 

    Investigates the diffusion of phosphorus in arsenic and boron doped silicon. Occurrence of diffusion via neutral and single negatively charged point defects; Calculation of activated diffusion and pairing coefficients; Correlation between the exponential and preexponential parameters.

  • Determination of the band offsets of the 4H-SiC/6H-SiC heterojunction using the vanadium donor.... Evwaraye, A.O.; Smith, S.R. // Applied Physics Letters;11/27/1995, Vol. 67 Issue 22, p3319 

    Examines defects in 4H-SiC/6H-SiC heterojunction using optical admittance spectroscopy. Identification of a vanadium donor level; Similarity of the optical admittance spectrum of 4H-SiC and 6H-SiC; Measurement of the band offset of 6H-SiC and 4H-SiC.

  • The influence of TiSi[sub 2] and CoSi[sub 2] growth on Si native point defects: The role of the.... Grossman, H.-J.; Tung, R.T. // Applied Physics Letters;5/13/1996, Vol. 68 Issue 20, p2870 

    Investigates the influence of titanium disilicide and cobalt disilicide growth on silicon native point defects. Use of boron- and antimony-doped superlattice samples; Composition of the as-deposited films; Observation of the interstitial undersaturation and vacancy supersaturation; Analysis of...

  • Atomistic simulation of point defects in silicon at high temperature. Sinno, Talid; Jiang, Z. Kurt // Applied Physics Letters;5/20/1996, Vol. 68 Issue 21, p3028 

    Examines the atomistic simulation of point defects in silicon at high temperature. Estimation of the equilibrium and transport properties; Exhibition of delocalization with increasing temperature; Prediction of diffusion coefficients and mechanisms as a function of temperature.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics