Quantitative analysis of low-energy Xe[sup +] ion bombardment damage of Si(100) surfaces using

Lu, Z.H.; Mitchell, D.F.
August 1994
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p552
Academic Journal
Analyzes the low-energy xenon (Xe) ion bombardment damage of silicon (Si) surfaces using X-ray photoelectron spectroscopy. Changes in the Si 2p core levels upon ion bombardment; Formation of amorphous Si overlayer on the Xe ion bombarded surface; Calculation of the depths of damage created at various levels of ion doses and ion energy.


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