TITLE

Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions

AUTHOR(S)
Chen, Y.; Liu, X.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p549
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the structure and electronic properties of misfit dislocations in zinc selenide/gallium arsenide (001) heterojunctions. Dominance of exciton and DA pair recombinations in the photoluminescence spectra; Comparison of the efficacy of irregular dislocations with dislocations found along (100) to trap carriers; Reason for non-occurrence of cross slips.
ACCESSION #
4258414

 

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