TITLE

Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

AUTHOR(S)
Khan, M. Asif; Krishnankutty, S.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p520
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the production of vertical cavity stimulated emission from photopumped indium gallium arsenide (InGaN)/GaN heterojunctions at room temperature. Deposition of InGaN/GaN heterojunction over sapphire substrates; Use of cross-section transmission electron spectroscopy to establish the nature of the heterojunction layers.
ACCESSION #
4258404

 

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