Nitrogen content of oxynitride films on Si(100)

Tang, H.T.; Lennard, W.N.
June 1994
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3473
Academic Journal
Determines the absolute nitrogen concentration in SiO[sub x]N[sub y]/Si films by nuclear reaction analysis. Comparison of the nuclear reaction to other surface analysis methods; Analysis of silicon oxynitride films prepared under various conditions; Location of the nitrogen accumulation.


Related Articles

  • A test of recently proposed He–N2 interactions: Angular distributions and rotationally inelastic collisions. Gianturco, F. A.; Venanzi, M.; Faubel, M. // Journal of Chemical Physics;3/1/1989, Vol. 90 Issue 5, p2639 

    Three recently proposed anisotropic potential energy surfaces (PES) for the He+N2 (1Σg) system are employed to compute differential scattering cross sections, total and state-to-state rotationally inelastic, at two collision energies for which accurate molecular beam experiments are already...

  • Investigation of αγ Angular Correlations in the Reaction [sup 15]N(p,αγ)[sup 12]C Induced by 7.5-MeV Protons. Ignatenko, A. V.; Lebedev, V. M.; Orlova, N. V.; Spassky, A. V. // Physics of Atomic Nuclei;Sep2000, Vol. 63 Issue 9, p1489 

    The double-differential cross sections for the reaction [sup 15]N(p, αγ)[sup 12]C induced by 7.5-MeV protons are measured for alpha-particle emission angles from 20° to 160°. All even spin-tensor components of the density matrix for the 2[sup +] state (4.44 MeV) of the final nucleus...

  • Fe/Fe-N multilayer films with low coercivity zero magnetostriction and high saturation magnetization. Shih, K. K.; Re, M. E.; Dove, D. B. // Applied Physics Letters;7/23/1990, Vol. 57 Issue 4, p412 

    A method of fabricating of Fe/Fe-N multilayer films in the form of alternating thin films of Fe separated by very thin interlayers of Fe-N sputtered in the presence of nitrogen is described. It was found that the properties of these films depended on the thickness of Fe and Fe-N layers and the...

  • Transitions in morphology observed in nitrogen/methane-hydrogen depositions of polycrystalline diamond films. Ayres, V. M.; Farhan, M.; Spach, D.; Bobbitt, J.; Abdul Majeed, J.; Wright, B. F.; Wright, B. L.; Asmussen, J.; Kanatzidis, M. G.; Bieler, T. R. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6062 

    In this work, we report on a series of transitions in morphology and texture as 5-1000 parts per million of nitrogen were added to 2% and 1% methane-hydrogen depositions of polycrystalline diamond films. Five results are reported. (1) The threshold for transition into the {100}-faceted...

  • A hydrogen storage layer on the surface of silicon nitride films. Ziyuan Liu; Shuu Ito; Wilde, Markus; Fukutani, Katsuyuki; Hirozawa, Ichiro; Koganezawa, Tomoyuki // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p192513 

    Composition, layer structure, and H-retaining stability of 980 °C N2-annealed silicon nitride-oxide (ON) stacks were analyzed using high resolution rutherford backscattering, synchrotron x-ray specular reflectometry, and nuclear reaction analysis. The formation of a Si2N2O layer in the...

  • Formation of β-Si3N4 by nitrogen implantation into SiC. Miyagawa, S.; Nakao, S.; Saitoh, K.; Ikeyama, M.; Niwa, H.; Tanemura, S.; Miyagawa, Y.; Baba, K. // Journal of Applied Physics;12/15/1995, Vol. 78 Issue 12, p7018 

    Presents a study which measured the depth of nitrogen implanted in SiC at high temperature and high fluence using the nuclear reaction analysis, Rutherford backscattering spectroscopy and Auger electron spectroscopy to analyze the formation process of composite SiC and Si[sub3]N[sub4] on the SiC...

  • Formation of modified Si/SiO... interfaces with intrinsic low defect concentrations. Gosset, L.G.; Ganem, J.J. // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3661 

    Studies the modification by postoxidation nitrogen oxide (NO) treatments of silicon/silicon dioxide interface. Application of nuclear reaction analysis in the study; Incorporation of NO molecules at the interface; Accomodation of the structural mismatch between the silicon lattice and the...

  • Neutron in-beam Mössbauer spectroscopy of iron disulfide at 298 and 78 K. Kobayashi, Y.; Yamada, Y.; Tsuruoka, Y.; Kubo, M. K.; Shoji, H.; Watanabe, Y.; Takayama, T.; Sakai, Y.; Sato, W.; Shinohara, A.; Segawa, M.; Matsue, H. // Hyperfine Interactions;2008, Vol. 187 Issue 1-3, p49 

    Emission Mössbauer spectra of 57Fe arising from the 56Fe(n, γ)57Fe reaction in two crystal forms of iron disulfide were measured at room temperature and liquid nitrogen temperature. Both forms exhibited two doublets assignable to the parent material and the new species produced by the...

  • Determination of lattice parameter and of N lattice location in In[sub x]Ga[sub 1-x]N[sub y]As[sub 1-y]/GaAs and GaN[sub y]As[sub 1-y]/GaAs epilayers. Bisognin, G.; De Salvador, D.; Mattevi, C.; Berti, M.; Drigo, A.V.; Ciatto, G.; Grenouillet, L.; Duvaut, P.; Gilet, P.; Mariette, H. // Journal of Applied Physics;1/1/2004, Vol. 95 Issue 1, p48 

    We have used an experimental strategy that, combining nuclear reaction analysis and Rutherford backscattering spectrometry both in random and channeling geometry, allowed an accurate quantification of the total amount of N in In[sub x]Ga[sub 1-x]N[sub y]As[sub 1-y]/GaAs and GaN[sub y]As[sub...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics