Very high two-dimensional hole gas mobilities in strained silicon germanium

Basaran, E.; Kubiak, R.A.
June 1994
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3470
Academic Journal
Details the growth of remote doped silicon/silicon germanide/silicon two-dimensional hole gas structures by molecular beam epitaxy. Factors leading to the increase the growth temperatures; Values of the record mobilities obtained in normal structures; Effect of interface roughness and interface charge scattering limit on low temperature mobilities.


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