Selective growth of Ge in GeF[sub 4]-Si[sub 2]H[sub 6] system

Yamamoto, Masaji; Takada, Yoshiharu
June 1994
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3467
Academic Journal
Investigates the selective growth of germanium in the reactive thermal chemical vapor deposition (CVD) with GeF[sub 4]-Si[sub 2]H[sub 6] system. Comparison of characteristics with those in tungsten-CVD; Role of growth temperature in the selectivity of the system; Importance of the growth mechanism of the film.


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