High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor

Lourdudoss, S.; Zhang, S.-L.
June 1994
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3461
Academic Journal
Investigates the phosphorus doping of polycrystalline silicon by direct diffusion and rapid thermal annealing (RTA) of phosphine (PH[sub 3]). Nonuniformity of the dopant profile at 685 degree Celsius; Results of the RTA in N[sub 2] and RTA in dioxide; Factor attributed for the differences in behavior.


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