TITLE

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor

AUTHOR(S)
Lourdudoss, S.; Zhang, S.-L.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3461
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the phosphorus doping of polycrystalline silicon by direct diffusion and rapid thermal annealing (RTA) of phosphine (PH[sub 3]). Nonuniformity of the dopant profile at 685 degree Celsius; Results of the RTA in N[sub 2] and RTA in dioxide; Factor attributed for the differences in behavior.
ACCESSION #
4258386

 

Related Articles

  • Enhanced oxygen diffusion in highly doped p-type Czochralski silicon. Murphy, J. D.; Wilshaw, P. R.; Pygall, B. C.; Senkader, S.; Falster, R. J. // Journal of Applied Physics;11/15/2006, Vol. 100 Issue 10, p103531 

    The locking of dislocations by oxygen has been investigated experimentally in Czochralski silicon (Cz-Si) with different concentrations of shallow dopants. Specimens containing well-defined arrays of dislocation half-loops were subjected to isothermal anneals in the 350–550 °C...

  • Effects of rapid thermal processing on molecular-beam epitaxy GaAs with SiOx encapsulation. Ito, Akira; Usami, Akira; Kitagawa, Akio; Wada, Takao; Tokuda, Yutaka; Kano, Hiroyuki // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2238 

    Presents information on a study which investigated variations of deep levels in silicon-doped molecular beam epitaxy n-gallium arsenide layers by rapid thermal processing (RTP) by deep level transient spectroscopy. Experimental procedure; Variations of electron traps by RTP; Depth profiles of EL2.

  • Rapid thermal anneal induced effects in polycrystalline silicon gate structures. Kamgar, Avid; Hillenius, S. J. // Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1251 

    Effects of dynamic temperature nonuniformities during rapid thermal anneal (RTA) cycles of layered structures have been investigated. Silicon gate capacitors (4000 Å, As doped, polycrystalline Si on 175 Å thermal oxide) were subjected to temperatures 450–1200 °C using...

  • Correlation between electronegativity and dopant activity in ion-implanted semi-insulating GaAs. Srinivasan, G.; Sealy, B. J. // Applied Physics Letters;7/23/1990, Vol. 57 Issue 4, p378 

    The effects of rapid thermal annealing (RTA) on the electrical activity of various implanted dopants (Be, Mg, Zn, and Hg) in semi-insulating GaAs have been studied by Van der Pauw Hall measurements and Polaron profiling. The relationship between the observed variation in the electrical...

  • Monolayer surface doping of GaAs from a plated zinc source. Dobkin, D. M.; Gibbons, J. F. // Applied Physics Letters;1984, Vol. 44 Issue 9, p884 

    We have investigated surface doping and diffusion of Zn in GaAs using rapid thermal processing. The use of an aqueous RuCl3 pretreatment has enabled us to electroplate uniform ≊100-Å-thick Zn layers directly on the GaAs surface. The excess Zn is removed with a 500 °C vacuum...

  • Silicon doping from phosphorus spin-on dopant sources in proximity rapid thermal diffusion. Zagozdzon-Wosik, W.; Grabiec, P.B.; Lux, G. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p337 

    Rapid thermal diffusion (RTD) of phosphorus has been investigated using a spin-on dopant (SOD) deposited on a silicon wafer and placed as a dopant source in proximity to a processed Si wafer. In such a process, the efficiency of doping is affected by the amount of P supplied from the SOD to the...

  • Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing. Choi, W. K.; Ho, V.; Ng, V.; Ho, Y. W.; Ng, S. P.; Chim, W. K. // Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p143114 

    The effect of rapid thermal annealing temperature on the diffusion of silicon (Si) and germanium (Ge) and the formation of Ge nanocrystals in a silicon oxide matrix was investigated. The formation of Ge nanocrystals was attributed mainly to the reduction of Ge suboxides by Si diffused from the...

  • Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC. Jeong Hyun Moon; Jeong Hyuk Yim; Han Seok Seo; Do Hyun Lee; Chang Hyun Kim; Hyeong Joon Kim; Kuan Yew Cheong; Wook Bahng; Nam-Kyun Kim // Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p122108 

    In this letter, we have reported electrical and physical properties of rapid thermal annealed (RTA) Al2O3 stacking dielectric on n-type 4H-SiC. The effects of SiN-reaction barrier layer (RBL) between Al2O3 and thermal-nitrided SiO2 on SiC-based metal-oxide-semiconductor characteristics have been...

  • The influence of defects and postdeposition treatments on the free carrier density in lightly phosphorus-doped large-grained polycrystalline silicon films. Straub, Axel; Inns, Daniel; Terry, Mason L.; Gebs, Raphael; Aberle, Armin G. // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p023507 

    The influence of postdeposition treatments (rapid thermal annealing and hydrogenation) on the doping of large-grained polycrystalline silicon p+nn+ thin-film diodes on glass substrates is investigated using resistivity and impedance analysis measurements. Whereas in the lightly phosphorus-doped...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics