Electrical band gap of porous silicon

Zhiliang Chen; Tzung-Yin Lee
June 1994
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3446
Academic Journal
Measures the current-voltage characteristics of porous silicon pn diodes. Domination of a strong surface channel current component of the reverse and forward bias current-voltage characteristic; Indication of the measured thermal activation energy of the reverse saturation current; Agreement between the two band gap measurements.


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