TITLE

Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon

AUTHOR(S)
Osten, H.J.; Bugiel, E.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3440
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the growth of Si[sub 1-x-y]Ge[sub x]C[sub y] layers on silicon(001) substrates. Adjustment of the strain in pseudomorphic silicon germanide layers; Importance of a linear extrapolation between the different lattice constants; Role of large carbon concentrations in the crystallographic degradation of the layers.
ACCESSION #
4258379

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics