TITLE

Relation between hole density and impurity density in ZnMgSSe semiconductors

AUTHOR(S)
Kondo, K.; Okuyama, H.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3434
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Explains the energy-gap dependence of saturated hole concentration in ZnMgSSe semiconductors based on the amphoretic native defect model. Approximation of the Fermi-level stabilization energy and the pinned Fermi-level energy (E[sub SI]); Estimation of the E[sub SI]; Band-gap discontinuity between ZnSe and ZnMgSSe.
ACCESSION #
4258377

 

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