Relation between hole density and impurity density in ZnMgSSe semiconductors

Kondo, K.; Okuyama, H.
June 1994
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3434
Academic Journal
Explains the energy-gap dependence of saturated hole concentration in ZnMgSSe semiconductors based on the amphoretic native defect model. Approximation of the Fermi-level stabilization energy and the pinned Fermi-level energy (E[sub SI]); Estimation of the E[sub SI]; Band-gap discontinuity between ZnSe and ZnMgSSe.


Related Articles

  • Impact ionization in N-polar AlGaN/GaN high electron mobility transistors. Killat, N.; Uren, M. J.; Keller, S.; Kolluri, S.; Mishra, U. K.; Kuball, M. // Applied Physics Letters;8/11/2014, Vol. 105 Issue 6, p1 

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in...

  • Device model for graphene bilayer field-effect transistor. Ryzhii, V.; Ryzhii, M.; Satou, A.; Otsuji, T.; Kirova, N. // Journal of Applied Physics;May2009, Vol. 105 Issue 10, p104510 

    We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies as well as energy gap in different sections of the...

  • Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K. Dang, Giang T.; Kanbe, Hiroshi; Taniwaki, Masafumi // Journal of Applied Physics;Nov2009, Vol. 106 Issue 9, p093523-1 

    Photoluminescence (PL) of an unintentionally doped Al0.5Ga0.5As/GaAs multiple quantum well (MQW) has been measured at temperatures from 5 to 400 K. It was found that the ratio of the intensity of the n=1 electron-light hole transition (1e-1lh) to that of the n=1 electron-heavy hole transition...

  • Anderson localization and the pseudogap in the energy spectrum of holes in PbTe: Tl under resonant scattering. Nemov, S.; Ravich, Yu.; Parfen'ev, R.; Shamshur, D. // Physics of the Solid State;May2011, Vol. 53 Issue 5, p936 

    This paper reports on a comprehensive study of the effect of additional doping with the Na acceptor impurity on the low-temperature resistivity of PbTe samples doped with Tl (2 at %), an impurity producing a band of resonant states within the valence-band spectrum. By additional doping with Na,...

  • Electronic Crystal State Reflects Bond Orderings and an Empirical Algorithm for Doping Curve Analysis. Oesterreicher, H. // AIP Conference Proceedings;2006, Vol. 850 Issue 1, p573 

    STM and ARPES display a partly disordered electronic crystal state that is here shown to corroborate a bond order model. This model predicts characteristic plaid structures for bond centered pairs at 3a0/2. We show that indications for some of these predicted patterns are now seen in...

  • The full penetration hole as a stochastic process: controlling penetration depth in keyhole laser-welding processes. Blug, A.; Abt, F.; Nicolosi, L.; Heider, A.; Weber, R.; Carl, D.; Höfler, H.; Tetzlaff, R. // Applied Physics B: Lasers & Optics;Jul2012, Vol. 108 Issue 1, p97 

    Although laser-welding processes are frequently used in industrial production the quality control of these processes is not satisfactory yet. Until recently, the 'full penetration hole' was presumed as an image feature which appears when the keyhole opens at the bottom of the work piece....

  • Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors. Hou, Y. T.; Li, M. F.; Lai, W. H.; Jin, Y. // Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p4034 

    We report the calculation of hole direct tunneling (DT) current from the inversion layer in a p-metal-oxide-semiconductor field-effect transistor based on a solid physical background. Our results are in good agreement with those obtained from carrier separation measurements over a wide range of...

  • Device simulation of low-band gap polymer solar cells: Influence of electron-hole pair dissociation and decay rates on open-circuit voltage. Shang, Yuan; Li, Qikai; Meng, Lingyi; Wang, Dong; Shuai, Zhigang // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p143511 

    We simulated the performance of recently developed highly efficient bulk heterojunction photovoltaic cells with poly [N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] as the donor and [6,6]-phenyl C70-butyric acid methyl...

  • X-ray photoconductivity due to trap-sensitive relaxation of hot carriers. Konovalov, I.; Makhova, L.; Wett, D.; Hallmeier, K.-H.; Szargan, R.; Mitdank, R. // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p222106 

    We observed the temperature-dependent modulation of the electrical conductivity in ZnO thin films under periodic illumination by soft x rays. At specific temperatures, small variations of the excitation energy near the x-ray absorption edges resulted in large element-specific variations of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics