TITLE

High performance InGaAs/GaAs quantum well infrared photodetectors

AUTHOR(S)
Gunapala, S.D.; Bandara, K.M.S.V.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3431
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures the optical and transport properties of In[sub 0.2]Ga[sub 0.8]As/gallium arsenide (GaAs) quantum well infrared photodetectors. Superiority of the large responsivity and detectivity values; Quality of the carrier transport of the GaAs barriers; Band offsets for the non-lattice-matched GaAs/In[sub x]Ga[sub 1-x]As heterobarrier.
ACCESSION #
4258376

 

Related Articles

  • Random telegraph signal of a multiple quantum well infrared photodetector. Kore, L.; Bosman, G. // Journal of Applied Physics;12/1/1999, Vol. 86 Issue 11, p6586 

    Presents information on a study which proposed a model for extraction of transport parameters from the random telegraph signal in a quantum well infrared photodetector. Methodology; Results; Conclusion.

  • Exchange interaction effects in quantum well infrared detectors and absorbers. Choe, J.-W.; O, Byungsung; Bandara, K. M. S. V.; Coon, D. D. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1679 

    Infrared excitation energies between the ground-state subband and the first excited-state subband in quantum wells are analyzed including the effect of exchange interactions on the ground-state subband. Analytic and numerical calculations relevant to infrared absorption and infrared detection...

  • Two-color GaAs/(AlGa)As quantum well infrared detector with voltage-tunable spectral sensitivity.... Kheng, K.; Ramsteiner, M. // Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p666 

    Presents measurements on a GaAs:Si/(AlGa)As quantum well intersubband detector structure. Dependence of the photoresponse on bias voltage; Description of the detector structure; Similarity between frequency dependence of the theoretical absorption to calculated photoconductive responsivity.

  • Two-color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells. Tsai, K.L.; Chang, K.H.; Lee, C.P.; Huang, K.F.; Tsang, J.S.; Chen, H.R. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3504 

    Examines two-color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells. Comparison between the quantum wells response peak; Fabrication of detectors to study bias dependent behavior; Explanation of the behavior using the current continuity concept.

  • Capture time versus barrier thickness in quantum-well structures measured by infrared.... Rosencher, E.; Luc, F. // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3312 

    Examines the use of photoconductive gain measurements in quantum well (QW) infrared detectors to determine the variation of electron capture time. Relationship between capture time and multi-QW period; Consistency with the quantum mechanical description of the capture process; Dependence of...

  • Voltage tunable three-color quantum well infrared photodetector. Tidrow, M.Z.; Choi, K.K.; Lee, C.Y.; Chang, W.H.; Towner, F.J.; Ahearn, J.S. // Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1268 

    Demonstrates the voltage tunable three-color quantum well infrared photodetector. Use of electron intersubband transitions in a coupled asymmetric double quantum well superlattice; Characterization of the infrared photocurrent spectrum using a blackbody monochromator source; Resolution of the...

  • Near-unity quantum efficiency of AlGaAs/GaAs quantum well infrared detectors using a waveguide.... Andersson, J.Y.; Lundqvist, L. // Applied Physics Letters;8/12/1991, Vol. 59 Issue 7, p857 

    Analyzes the quantum well infrared detectors based on a waveguide with a doubly periodic grating coupler. Mechanisms of coupling radiation into quantum well detectors; Basis for the mathematical modeling of quantum efficiency; Use of grating monochromator with a glowbar source.

  • Effect of the shape of the first barrier on quantum well infrared photodetector performance. Liu, H.C.; Li, L. // Journal of Applied Physics;7/15/1997, Vol. 82 Issue 2, p889 

    Studies a set of GaAs/AlGaAs quantum well infrared photodetectors with various shapes fo the first barrier. Types of barriers investigated; Major structural differences between the samples.

  • Grating enhanced quantum well detector. Goossen, K. W.; Lyon, S. A. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1257 

    An infrared detector based on the excitation of carriers out of a modulation-doped quantum well is theoretically investigated. The efficiency of the detector is increased by using a grating to enhance the fields in the well. Scattering effects are taken into account by designing the quantum well...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics