TITLE

Suppression of Cu diffusion from a bulk ZnSe substrate to a homoepitaxial layer by Se-beam

AUTHOR(S)
Hishida, Yuji; Toda, Tadao
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3419
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the copper (Cu) diffusion of homoepitaxial zinc selenide (ZnSe) through low-temperature photoluminescence (PL) spectra. Effect of Se-beam irradiation prior to growth; Disappearance of Cu-related emissions from the PL spectrum; Usefulness of treatment in improving the purity of the ZnSe layers.
ACCESSION #
4258371

 

Related Articles

  • High p-type doping of ZnSe using Li[sub 3]N diffusion. Lim, S.W.; Honda, T. // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2437 

    Demonstrates the high p-type doping of ZnSe layer using a Li[sub 3]N diffusion technique. Level of the hole concentration of the p-type ZnSe layer; Resistivity of the layer; Administration of an ohmic contact by using the p[sup +]-type ZnSe as a contact layer for p-ZnSe epilayers.

  • Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy. Yao, Takafumi; Takeda, Toshihiko; Watanuki, Ryuji // Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1615 

    Atomic layer epitaxy has been employed to produce good-quality ZnSe single crystalline films onto (100) oriented GaAs substrates. The epilayers grown at 280 °C exhibited smooth and featureless surface texture and excellent photoluminescence characteristics. They showed dominant excitonic...

  • Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth. Vaksman, Yu. F.; Nitsuk, Yu. A.; Purtov, Yu. N.; Shapkin, P. V. // Semiconductors;Aug2001, Vol. 35 Issue 8, p883 

    The optical absorption and photoluminescence spectra and the Hall effect were studied in ZnSe:In single crystals. The presence of electrically active In[sub Zn, sup +] donor centers responsible for the impurity absorption and electrical conduction of crystals is established. It is shown that the...

  • Investigation of minority carrier trapping in n-type doped ZnSe using photoluminescence decay.... Massa, J.S.; Buller, G.S. // Applied Physics Letters;7/3/1995, Vol. 67 Issue 1, p61 

    Examines the minority carrier trapping in n-type doped zinc selenide using photoluminescence decay measurements. Confirmation of the trapping and recombination process linearity; Impact of temperature on the luminescence intensity; Presence of deep acceptor levels.

  • Photoluminescence in ZnSe-based quantum well wire structures. Ding, J.; Nurmikko, A.V. // Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2254 

    Fabricates zinc selenide-based quantum well wire structures by electron beam lithography. Employment of ultraviolet argon ion laser in photoluminescence (PL) study; Observation of PL efficiency as a function of wire width; Effects of the nonradiative recombination sidewalls of the wires.

  • Photoluminescence study of deep levels in Cr-doped ZnSe. Bhaskar, S.; Dobal, P.S. // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p439 

    Presents information on a study which deals with photoluminescence of deep levels in chromium-doped zinc selenide. Experimentation; Results and discussion; Conclusion.

  • Stimulated emission and laser oscillation from light-hole excitonic state in a ZnSe-Zn0.8Cd0.2Se superlattice. Guan, Z. P.; Zheng, Z. H.; Fan, X. W. // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2478 

    Focuses on stimulated emission from n=1 light-hole excitons in a zinc (Zn) selenide-Zn-cadmium-selenium superlattice. Formula for the measurement of gain spectra; Photoluminescence spectra of the superlattices; Time behavior of different lasing modes.

  • Investigation of donor-acceptor pair luminescence from ZnSe:N epilayers. Moldovan, M.; Myers, T.H. // Journal of Applied Physics;11/15/1998, Vol. 84 Issue 10, p5743 

    Examines the low-temperature photoluminescence (PL) due to donor-acceptor pair recombination in a series of nitrogen-doped zinc selenide (ZnSE:N) epilayers. Experimentation; PL results from lightly and heavily doped ZnSe:N; Conclusions.

  • Dynamic mechanisms in photoluminescence of gallium-doped ZnSe grown by molecular-beam epitaxy. Wang, S. Z.; Yoon, S. F. // Journal of Applied Physics;5/1/2003, Vol. 93 Issue 9, p5091 

    Reported are the temperature-dependent photoluminescence (PL) results of molecular-beam epitaxy-grown gallium-doped zinc selenide (ZnSe:Ga) sample with the sample temperature varied from 10 to 300 K. The physical origins of a twin PL structure peaked at 2.794 and 2.733 eV, respectively, that...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics