Pulsed laser deposition of silicon carbide at room temperature

Capano, M.A.; Walck, S.D.
June 1994
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3413
Academic Journal
Details the pulsed laser deposition of silicon carbide (SiC) films at room temperature. Ablation of a 6H-SiC target using radiation from the krypton fluoride excimer laser; Observation of the Si 2p peaks; Shift in binding energy revealed by the scans of the C 1s peak; Equivalence of the integrated areas and shapes of the peaks from the film.


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