Pulse-time-modulated electron cyclotron resonance plasma etching for highly selective, highly

Samukawa, Seiji
June 1994
Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3398
Academic Journal
Presents a highly selective, highly anisotropic, and notch-free etching for polycrystalline silicon achieved in pulse-time-modulated electron cyclotron resonance plasma etching. Improvement of the selectivity ratio of polycrystalline silicon etching rate; Control of the ion energy distributions through the duty ratio; Elimination of surface charging.


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