TITLE

Heteroepitaxial growth of InN on AlN-nucleated (00.1) sapphire by ultrahigh vacuum electron

AUTHOR(S)
Bryden, Wayne A.; Ecelberger, Scott A.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2864
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the heteroepitaxial growth of indium nitride (InN) thin films on aluminum nitride-nucleated sapphire by electron cyclotron resonance-assisted reactive magnetron sputtering. Evidence for enhanced Hall mobilities; Decrease in carrier concentration and homogenous strain; Increase in optical band gap of InN thin films.
ACCESSION #
4258341

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics