TITLE

Heteroepitaxial growth of InN on AlN-nucleated (00.1) sapphire by ultrahigh vacuum electron

AUTHOR(S)
Bryden, Wayne A.; Ecelberger, Scott A.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2864
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the heteroepitaxial growth of indium nitride (InN) thin films on aluminum nitride-nucleated sapphire by electron cyclotron resonance-assisted reactive magnetron sputtering. Evidence for enhanced Hall mobilities; Decrease in carrier concentration and homogenous strain; Increase in optical band gap of InN thin films.
ACCESSION #
4258341

 

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