Heteroepitaxial growth of InN on AlN-nucleated (00.1) sapphire by ultrahigh vacuum electron

Bryden, Wayne A.; Ecelberger, Scott A.
May 1994
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2864
Academic Journal
Examines the heteroepitaxial growth of indium nitride (InN) thin films on aluminum nitride-nucleated sapphire by electron cyclotron resonance-assisted reactive magnetron sputtering. Evidence for enhanced Hall mobilities; Decrease in carrier concentration and homogenous strain; Increase in optical band gap of InN thin films.


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