Threshold current density of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

Seoung-hwan Park; Weon-guk Jeong
May 1994
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2855
Academic Journal
Examines the threshold current density of indium gallium arsenide/indium gallium arsenide phosphide (InGaAs/InGaAsP) quantum well lasers. Similarity of the energy band-gap range of AlGaAs to the lattice matched InGaAsP; Calculation of the valence-band offset and energy dispersion; Potential of InGaAs/InGaAsP lasers for optoelectronic applications.


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