Electrical properties of thermal oxide grown on n-type 6H-silicon carbide

Alok, Dev; McLarty, P.K.
May 1994
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2845
Academic Journal
Examines the electrical properties of thermal oxide grown on n-type 6H-silicon carbide. Details on the barrier height of current conduction; Determination of electron affinity for the silicon face of 6H-silicon carbide; Information on the interface trap density at the interface between silicon carbide and oxide.


Related Articles

  • Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interface. Shenoy, J. N.; Das, M. K.; Cooper, J. A.; Melloch, M. R.; Palmour, J. W. // Journal of Applied Physics;3/15/1996, Vol. 79 Issue 6, p3042 

    Focuses on a study which characterized the SiO[sub2]/SiC interface through the high-low capacitance-voltage and conductance-frequency techniques. Experimental details; Results and discussion; Summary.

  • Comparison of thermally oxidized metal-oxide-semiconductor interfaces on 4H and 6H polytypes of .... Shenoy, Jayarama N.; Cooper Jr., James A. // Applied Physics Letters;2/5/1996, Vol. 68 Issue 6, p803 

    Compares the thermally oxidized metal-oxide-semiconductor interfaces on 4H and 6H polytypes of silicon carbide. Similarity of oxidation rates and interfacial quality; Suitability of the 4H polytype in developing field effect transistors; Effect of postoxidation annealing.

  • Characterization of oxide films on 4H-SiC epitaxial (0001) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation. Hijikata, Yasuto; Yaguchi, Hiroyuki; Yoshida, Sadafumi; Takata, Yasutaka; Kobayashi, Keisuke; Nohira, Hiroshi; Hattori, Takeo // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p053710 

    Wet and dry oxide films-4H-SiC epitaxial (0001) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface...

  • Study on Formation of ZnO/SiC Interface by SRPES. Xu, P. S.; Zou, C. W.; Sun, B.; Wu, Y. Y.; Xu, F. Q.; Pan, H. B. // AIP Conference Proceedings;2007, Vol. 879 Issue 1, p1615 

    The adsorption and the thermal oxidation of Zn on 6H-SiC surface and the interface formation of ZnO/SiC have been investigated by SRPES and XPS. With increasing of Zn coverage, the surface exhibits metallic characteristic. When the deposited Zn film is annealed at 180°C in oxygen flux, it...

  • Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001¯) face. Fukuda, K.; Cho, W. J.; Arai, K.; Suzuki, S.; Senzaki, J.; Tanaka, T. // Applied Physics Letters;8/7/2000, Vol. 77 Issue 6 

    The C(0001¯) face of silicon carbide (SiC) has superior properties such as a faster oxidation ratio and a smoother surface compared with the Si(0001) face. We have investigated the oxidation and post-oxidation annealing effects on the capacitance-voltage and the interface state density (D[sub...

  • Electrical Properties of the 3C-SiC/SiO2 Interface Grown With High Temperature Oxidation. Sharma, Y. K.; Li, F.; Fisher, C. A.; Jennings, M. R.; Perez-Tomas, A.; Thomas, S. M.; Hamilton, D.; Mawby, P. A. // International Journal of Fundamental Physical Sciences;Dec2014, Vol. 4 Issue 4, p122 

    3C-Silicon carbide (SiC) metal-oxide-semiconductor (MOS) capacitors are fabricated to study the 3C-SiC/SiO2 interface using standard hi-low capacitance-voltage (C-V) and conductance-voltage (G-V) methods. Devices are fabricated on an ntype 3C-SiC epilayer grown on a (100) oriented silicon (Si)...

  • Effects of interface state charges on the electrical properties of Si/SiC heterojunctions. Liang, J.; Nishida, S.; Hayashi, T.; Arai, M.; Shigekawa, N. // Applied Physics Letters;10/13/2014, Vol. 105 Issue 15, p1 

    Electrical properties of p--Si/n--SiC, p-Si/n--SiC, p+Si/n--SiC, and n+-Si/n--SiC heterojunctions fabricated by using surface-activated bonding are investigated. Their flat-band voltages obtained from capacitance-voltage (C-V) measurements are found to be ~0.92eV, which suggests that the Fermi...

  • Shallow electron traps at the 4H-SiC/SiO[sub 2] interface. Afanas'ev, V. V.; Stesmans, A.; Bassler, M.; Pensl, G.; Schulz, M. J. // Applied Physics Letters;1/17/2000, Vol. 76 Issue 3 

    Low-temperature electrical measurements and photon-stimulated electron tunneling experiments reveal the presence of a high density of interface states at around 0.1 eV below the conduction band of 4H-SiC at its interface with thermally grown SiO[sub 2]. These states, related to defects in the...

  • On the correlation between the carbon content and the electrical quality of thermally grown oxides on p-type 6H–Silicon carbide. Vathulya, Vickram R.; Ning Wang, Dong; White, Marvin H. // Applied Physics Letters;10/12/1998, Vol. 73 Issue 15 

    Thermal oxides on p-type silicon carbide exhibit high densities of interface states and fixed charge. Understanding the effect of the oxide composition on the electrical properties is imperative to improve the quality of oxides on p-type silicon carbide. In this work, we use angle resolved x-ray...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics