Ballistic-electron-emission microscopy characteristics of reverse-biased Schottky diodes

Davies, A.; Craighead, H.G.
May 1994
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2833
Academic Journal
Examines the use of ballistic-electron-emission microscopy to study gold/silicon Schottky diodes under reverse-bias conditions. Effects of reverse bias on the barrier height and collection efficiency of electron transport; Reduction of backscattered electrons; Determination of the interface transmission factor by energy phase-space matching conservation.


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