TITLE

Ballistic-electron-emission microscopy characteristics of reverse-biased Schottky diodes

AUTHOR(S)
Davies, A.; Craighead, H.G.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2833
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of ballistic-electron-emission microscopy to study gold/silicon Schottky diodes under reverse-bias conditions. Effects of reverse bias on the barrier height and collection efficiency of electron transport; Reduction of backscattered electrons; Determination of the interface transmission factor by energy phase-space matching conservation.
ACCESSION #
4258330

 

Related Articles

  • A High resolution Si position sensor. Scott, K.A.M.; Sharma, A.K.; Wilson, C.M.; Mullins, B.W.; Soares, S.F.; Brueck, S.R.J. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3141 

    Describes the planar back-to-back Schottky-barrier silicon position sensor. Vibration-limited optical-position sensitivity of the device; Relation between circuit photocurrent response and detector gap; Response time of the unbiased device.

  • Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers. Murel, A.; Novikov, A.; Shashkin, V.; Yurasov, D. // Semiconductors;Nov2012, Vol. 46 Issue 11, p1358 

    The possibility of controlling the effective barrier height in Schottky diodes based on silicon structures grown by the molecular-beam-epitaxy method is experimentally investigated. It is shown that control of the effective barrier height is possible both when using heavily doped surface...

  • Electron transport of inhomogeneous Schottky barriers. Tung, R. T. // Applied Physics Letters;6/17/1991, Vol. 58 Issue 24, p2821 

    Presents a novel approach which leads to analytic solutions to the potential and the electron transport through inhomogeneous Schottky barriers. Existence of barrier height nonuniformities; Possible lateral variations of the Schottky barrier height.

  • Time-resolved luminescence study of ultrafast carrier transport in GaAs.... Kersting, R.; Plettner, J.; Leo, K.; Averin, S.; Kurz, H. // Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p732 

    Examines the ultrafast carrier transport in interdigitated GaAs metal-semiconductor-metal Schottky diodes. Use of femtosecond time-resolved luminescence spectroscopy; Dependence of the luminescence signal on bias voltage and carrier density; Direct observation of field-induced intervalley...

  • Effect of Ballistic Electron Transport in Metal—n-GaAs—n[sup +]-GaAs Schottky-Barrier Structures. Torkhov, N. A. // Semiconductors;Jul2001, Vol. 35 Issue 7, p788 

    The interaction of an electron with the potential formed at the Schottky-barrier metal-semiconductor contact was investigated under the assumption that the motion is ballistic. Three cases of interaction of the electron with the barrier potential were considered; i.e., strong and weak...

  • Barrier Height and Tunneling Current in Schottky Diodes with Embedded Layers of Quantum Dots. Yakimov, A. I.; Dvurechenskiı, A. V.; Nikiforov, A. I.; Chaıkovskiı, S. V. // JETP Letters;1/25/2002, Vol. 75 Issue 2, p102 

    Electrical characteristics of silicon Schottky diodes containing Ge quantum dot (QD) arrays are investigated. It has been found that the potential barrier height at the metal–semiconductor contact can be controlled by introducing dense QD layers, which is a consequence of the formation of...

  • Characteristics of TiN.../n-Si Schottky diodes deposited by reactive magnetron sputtering. Dimitriadis, C.A.; Patsalas, P. // Journal of Applied Physics;4/15/1999 Part 1 of 2, Vol. 85 Issue 8, p4238 

    Focuses on a study which examined the effects of substrate bias voltage and the deposition temperature on the electrical characteristics of titanium nitride/n-silicon Schottky diodes. Experimental details; Results and discussion; Conclusions.

  • Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ ion bombardment. Carr, B. A.; Friedland, E.; Malherbe, J. B. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4775 

    Presents a study that examined the effect of annealing on the voltage-current characteristics of the Schottky contacts of an aluminum/n-silicon Schottky diodes after argon[sup+] ion bombardment. Methodology; Effect of annealing on the Schottky barrier height; Analysis of the depth profile of...

  • Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes. Chand, S.; Kumar, J. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 4/5, p497 

    The current–voltage (I-V) characteristics of Schottky diodes, prepared by deposition of palladium film on to a n/n[sup +] silicon wafer held at 573 K, are measured over a temperature range 37–307 K and analyzed in terms of thermionic emission–diffusion (TED) theory by...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics