Characterization of process-induced strains in GaAs/Ga[sub 0.7]Al[sub 0.3]As quantum dots using

Qiang, H.; Pollak, Fred H.
May 1994
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2830
Academic Journal
Examines the characteristics of GaAs/Ga[sub 0.7]Al[sub 0.3]As quantum dots fabricated by reactive-ion etching. Analysis of the magnitude and nature of the process-induced strain in the dots; Transition between the conduction and valence bands; Details of photoreflectance features of the quantum dots.


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