TITLE

Characterization of process-induced strains in GaAs/Ga[sub 0.7]Al[sub 0.3]As quantum dots using

AUTHOR(S)
Qiang, H.; Pollak, Fred H.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2830
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the characteristics of GaAs/Ga[sub 0.7]Al[sub 0.3]As quantum dots fabricated by reactive-ion etching. Analysis of the magnitude and nature of the process-induced strain in the dots; Transition between the conduction and valence bands; Details of photoreflectance features of the quantum dots.
ACCESSION #
4258329

 

Related Articles

  • Exciton recombination energy in spherical quantum dots on Ga1-xInxAsySb1-y/GaSb grown by liquid-phase epitaxy. Sánchez-Cano, R.; Tirado-Mejía, L.; Fonthal, G.; Ariza-Calderón, H.; Porras-Montenegro, N. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113706 

    Photoluminescence and photoreflectance responses at 12 K of Ga1-xInxAsySb1-y films grown over GaSb single-crystal substrates by liquid-phase epitaxy do not exhibit the same energy values. The photoluminescence peak shifts to 20 meV in relation to the photoreflectance response, indicating a...

  • Saturation of intraband absorption and electron relaxation time in n-doped InAs/GaAs self-assembled quantum dots. Sauvage, S.; Boucaud, P.; Glotin, F.; Prazeres, R.; Ortega, J.-M.; Lemaı⁁tre, A.; Ge´rard, J.-M.; Thierry-Flieg, V. // Applied Physics Letters;12/28/1998, Vol. 73 Issue 26, p3818 

    We have observed the saturation of intraband absorption in InAs/GaAs self-assembled quantum dots. The investigated n-doped self-assembled quantum dots exhibit an intraband absorption within the conduction band, which is peaked at an 8 μm wavelength. The saturation of the intraband absorption...

  • Conduction band spectra in self-assembled InAs/GaAs dots: A comparison of effective mass and an.... Hongtao Jiang; Singh, Jasprit // Applied Physics Letters;12/1/1997, Vol. 71 Issue 22, p3239 

    Examines the electronic spectra in InGaAs/GaAs quantum dots using an eight-band k.p formalism. Presence of several bound states in the conduction band well; Inapplicability of simpler effective mass approach to quantitatively examine the physics of intersubband devices; Calculation of...

  • Local conduction band offset of GaSb self-assembled quantum dots on GaAs. Rubin, M.E.; Blank, H.R. // Applied Physics Letters;3/24/1997, Vol. 70 Issue 12, p1590 

    Investigates the local conduction band offset of gallium-antimony self-assembled quantum dots grown on gallium arsenide. Use of ballistic electron emission microscopy and molecular beam epitaxy; Dependence of dot spectrum on dot barrier height and thickness; Quantum mechanical reflection and...

  • Electronic and optical properties of Cd1-xZnxS nanocrystals. Safta, N.; Sakly, A.; Mejri, H.; Bouazra, Y. // European Physical Journal B -- Condensed Matter;May2006, Vol. 51 Issue 1, p75 

    We report a numerical simulation of the conduction and valence band edges of Cd1-xZnxS nanocrystallites using a one — dimensional potential model. Electron — hole pairs are assumed to be confined in nanospheres of finite barrier heights. Optical absorption measurements are used to...

  • Optical properties of CdTe/CdZnTe wires and dots fabricated by a final anodic oxidation etching. Gourgon, C.; Le Si Dang // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1635 

    Investigates the optical properties of CdTe/CdZnTe wires and dots fabricated by a final anodic oxidation etching. Observation of remarkable improvements in the optical properties of the nanostructures; Similarity between the photoluminescence spectra and reference quantum well; Use of a two...

  • Post-growth tailoring of quantum-dot saturable absorber mirrors by chemical etching. Lumb, M.; Farrell, D.; Clarke, E.; Damzen, M.; Murray, R. // Applied Physics B: Lasers & Optics;Mar2009, Vol. 94 Issue 3, p393 

    We have designed and grown a resonant, low-finesse quantum-dot saturable absorber mirror and subsequently modified the important parameters using chemical etching. The modulation depth and saturation fluence at the design wavelength of 1064 nm were modified by etching the sample to tune the...

  • Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Katsaros, G.; Rastelli, A.; Stoffel, M.; Costantini, G.; Schmidt, O. G.; Kern, K.; Tersoff, J.; Müller, E.; von Känel, H. // Applied Physics Letters;12/18/2006, Vol. 89 Issue 25, p253105 

    The authors apply selective wet chemical etching and atomic force microscopy to reveal the three-dimensional shape of SiGe/Si(001) islands after capping with Si. Although the “self-assembled quantum dots” remain practically unaffected by capping in the temperature range of...

  • Spin qubits in graphene quantum dots. Trauzettel, Björn; Bulaev, Denis V.; Loss, Daniel; Burkard, Guido // Nature Physics;Mar2007, Vol. 3 Issue 3, p192 

    The main characteristics of good qubits are long coherence times in combination with fast operating times. It is well known that carbon-based materials could increase the coherence times of spin qubits, which are among the most developed solid-state qubits. Here, we propose how to form spin...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics